GRENOBLE, France and SAN FRANCISCO, December 10, 2024 /PRNewswire/ — Quobly, a leading French quantum computing startup, has reported that FD-SOI technology can serve as a scalable platform for commercial quantum computing by leveraging conventional semiconductor manufacturing facilities and CEA-Leti's R&D pilot line.
The semiconductor industry has made a decisive contribution to enabling classic computers to be scaled cost-effectively. They have the same transformative potential for quantum computing, making them commercially scalable and cost-effective. Silicon spin qubits are ideal for fault-tolerant, quantum mainframe computers, offering clock speeds in the µs range, greater than 99% reliability for one- and two-qubit gate operations, and incomparably small cell sizes (hundredths of 100 nm²). have.
Um from the To benefit from decades of investment in semiconductor infrastructure, Quobly has chosen a factory-less model. The focus is on FD-SOI, a commercially available CMOS technology manufactured by world leaders such as STMicroelectronics, GlobalFoundries and Samsung, which serves as a platform for quantum computing.
Quobly's work, which will be reported at IEDM on December 9, 2024, addresses the critical challenges of scaling quantum systems. Together with CEA-Leti, CEA-IRIG and CNRS, Quobly has demonstrated the key building blocks for a quantum computer using commercial FD-SOI:
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Low temperature operation and characterization of their digital and analog performance while adhering to circuit layout guidelines.
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Single qubit operations with hole-spin and electron spin qubits using CEA-Leti's R&D pilot facility. This ambipolar platform optimizes system performance by leveraging the long coherence times of electrons for storage and the strong spin-orbit interaction of holes for fast data processing.
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Charge control in the commercial GF 22FDX to further define a standard cell for a two-qubit gate.
The most important errors include:
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Cryogenic control electronics: Voltage gain up to 75 dB, noise level of 10-11V²∙μm²/Hz and threshold voltage variability of 1.29 mV∙μm.
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Ambipolar spin qubits: Co-integration of hole and electron qubits on FD-SOI technology with a manipulation speed of 1 μs for holes and 40 μs coherence time (Hahn echo) for electrons.
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Two-qubit gate standard cell: Demonstration of double quantum dot operations with commercial FD-SOI – a step towards commercial quantum systems.
